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MOS (Metal Oxide Semiconductor) Physics and Technology, by E. H. Nicollian, J. R. Brews
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Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
- Sales Rank: #1082697 in Books
- Published on: 1982-03-18
- Original language: English
- Number of items: 1
- Dimensions: 9.47" h x 1.97" w x 6.34" l, .0 pounds
- Binding: Hardcover
- 928 pages
From the Publisher
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
From the Back Cover
The Wiley Classics Library consists of selected books that have become recognized classics in their respective fields. With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists.
Most helpful customer reviews
2 of 2 people found the following review helpful.
MOS Physics and Technology book review
By art
This book focuses on the metal insulator semiconductor (MIS) device physics. As such it goes in to detail at a greater depth than Sze or general SC device physics. It is well written and easy to understand. Good use of appendices for derivations that would bog down the text. The only complaint is that the type (this is a paperback) on some of the symbols is too small to easily read. I have seen the hardback and did not notice that problem with it.
2 of 2 people found the following review helpful.
A must have
By A Customer
This is the quintessential review of the MOS capacitor. Excellently written, thorough and still very current. This text is essential for the bookshelf of all semiconductor scientists and engineers.
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